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#insulated-gate_bipolar_transistor

Insulated-gate bipolar transistor

Type of solid state switch

An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (NPNP) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.

Sun 15th

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