Sequential infiltration synthesis

Film infiltration

Sequential infiltration synthesis (SIS) is a technique derived from atomic layer deposition (ALD) in which a polymer is infused with inorganic material using sequential, self-limiting exposures to gaseous precursors, allowing precise control over the composition, structure, and properties of product materials. This synthesis involves metal-organic vapor-phase precursors and co-reactants dissolving and diffusing into polymers, interacting with the polymer's functional groups via reversible complex formation and/or irreversible chemical reactions, yielding desired composite materials, which may be nanostructured. The metal-organic precursor (A) and co-react vapor (B) are supplied in an alternating ABAB sequence. Following SIS, the organic phase can be removed thermally or chemically to leave only the inorganic components behind. The precise control over the infiltration and synthesis via SIS allows the creation of materials with tailored properties such as composition, mechanics, stoichiometry, porosity, conductivity, refractive index, and chemical functionality on the nanoscale. This versatility makes SIS useful in applications widely ranging from electronics to energy storage to catalysis. SIS is sometimes referred to as "multiple pulsed vapor-phase infiltration" (MPI), "vapor phase infiltration" (VPI) or "sequential vapor infiltration" (SVI).

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