#stress-induced_leakage_current
Stress-induced leakage current
Increase in gate leakage current of MOSFETs
Stress-induced leakage current (SILC) is an increase in the gate leakage current of a MOSFET, used in semiconductor physics. It occurs due to defects created in the gate oxide during electrical stressing. SILC is perhaps the largest factor inhibiting device miniaturization. Increased leakage is a common failure mode of electronic devices.
Sun 9th
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